Samsung Electronics, a pioneer in advanced memory technology, announced that it has started mass production of the 9th generation vertical NAND (V-NAND). This new generation V-NAND offers 1 terabit (Tb) capacity with its tri-level cell (TLC) structure and reinforces its leadership in the NAND flash market.
Samsung begins first mass production of 9th generation V-NAND
With the 9th generation V-NAND, Samsung has achieved approximately 50% higher bit density than the previous generation. This generation, the company increased productivity by using the industry’s smallest cell size and thinnest die. Advanced “channel hole etching” technology increases production efficiency by increasing the number of cell layers with a double-layer structure.
Innovations in V-NAND are designed to improve product quality and reliability while reducing cell-to-cell interaction. This generation is also equipped with the next generation NAND flash interface “Toggle 5.1”, which supports data input/output speeds of up to 3.2 gigabits/second. This high performance shows that Samsung will expand PCIe 5.0 support while aiming to strengthen its position in the solid state drive (SSD) market.
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Energy consumption is reduced by 10% compared to the previous generation, thanks to the low-power design. This helps meet customers’ demands for energy efficiency while reducing environmental impact. Samsung started mass production of 1Tb TLC 9th generation V-NAND this month and plans to launch the quad-level cell (QLC) model in the second half.
While these developments reinforce Samsung’s leadership in the NAND flash market, they also offer new opportunities for areas such as artificial intelligence and high-performance data processing. Samsung’s 9th generation V-NAND can set new standards in the industry with high performance and low energy consumption. This reflects the company’s mission to create a strong foundation for future memory technologies.