Samsung introduced high-capacity HBM3E memory for faster AI training and inference. Its memory, called Samsung HBM3E 12H DRAM, came with advanced TC NCF technology. HBM in the name of the memory means “high bandwidth memory”. So what are the other details?
Samsung HBM3E 12H DRAM memory specifications
In October, Samsung introduced the HBM3E Shinebolt, an improved version of the third generation of HBM that can achieve 9.8Gbps per pin (and 1.2 terabytes per packet).
The 12H in the name of the memory represents the number of chips positioned vertically in each module. In this way, Samsung increased the size of the memory by 50% compared to the 8H design, reaching 36 GB. However, bandwidth remains at 1.2 terabytes/second.
Let’s talk about TC NCF technology. This is the name of the material placed between vertically positioned chips. Samsung worked to make it thinner and managed to reduce its size to 7µm.
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An added benefit of TC NCF is that it has improved thermal properties that help improve cooling. Even better, the method used in Samsung HBM3E 12H DRAM also increases efficiency.
So what will this memory be used for? Of course, for artificial intelligence. As you know, artificial intelligence models require a lot of RAM. Last year, Nvidia added Samsung to its list of high-bandwidth memory suppliers.
Now the company seems to have taken action for this. What do you think about HBM3E? Please don’t forget to share your thoughts with us in the comments section.