Samsung introduces 14nm DDR5 DRAM module

Samsung, one of the world’s leading memory manufacturers, 14nm technology produced with DDR5 DRAM announced that it has put it into mass production.


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Samsung saves 20 percent power with 14nm DDR5 DRAM

Next-generation DDR5 DRAMs extreme ultraviolet (EUV) lithography Explaining that it produces with In addition, the company stated that the power consumption per chip has also increased by 20 percent compared to the previous generation.

Samsung introduces 14nm DDR5 DRAM module

Samsung, the largest memory chip maker, is in the production of DRAM for the first time in March 2020. to 5 layers He announced that he was implementing the EUV. The company, which wants to maintain its leadership in the memory market, announced that it will apply UEV to more DRAM layers.

With 16GB chips in March 2021 DDR5 DRAM module with 512GB capacity Announcing that it has developed a new technology, the company stated that it will offer a module with a 24 GB chip for efficiency.

Senior Vice President and Head of DRAM Product and Technology, Samsung Electronics Jooyoung Lee “Today Samsung broke another technology milestone with its multi-layer EUV that enables extreme reduction at 14nm. What we do is traditional argon fluoride (ArF) It is not possible to do with We will continue to offer different memory solutions by addressing the need for more performance in the world of 5G, artificial intelligence and big data.” said.

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